TY - JOUR
T1 - Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells
AU - De Poortere, E. P.
AU - Shkolnikov, Y. P.
AU - Tutuc, E.
AU - Papadakis, S. J.
AU - Shayegan, M.
AU - Palm, E.
AU - Murphy, T.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2002/3/4
Y1 - 2002/3/4
N2 - We report improvements in the quality of two-dimensional (2D) electrons in modulation-doped AlAs quantum wells, leading to electron mobilities as high as 31m2/Vs, a ten-fold increase over the mobility of previous AlAs samples. Confirming the quality of our quantum wells, developing fractional quantum Hall states are observed in the first Landau level at high order filling factors ν=2/5, 3/5, 3/7, 4/7, and 4/9, and at larger fillings, at ν=4/3, 5/3, 7/3, 8/3, 8/5, and 11/3. Thanks to the much larger effective mass and g factor of AlAs 2D electrons compared to GaAs, and to the possible multivalley occupancy of AlAs 2D electrons, our improved systems help bring a wider scope to the investigation of low-disorder, interacting 2D electrons.
AB - We report improvements in the quality of two-dimensional (2D) electrons in modulation-doped AlAs quantum wells, leading to electron mobilities as high as 31m2/Vs, a ten-fold increase over the mobility of previous AlAs samples. Confirming the quality of our quantum wells, developing fractional quantum Hall states are observed in the first Landau level at high order filling factors ν=2/5, 3/5, 3/7, 4/7, and 4/9, and at larger fillings, at ν=4/3, 5/3, 7/3, 8/3, 8/5, and 11/3. Thanks to the much larger effective mass and g factor of AlAs 2D electrons compared to GaAs, and to the possible multivalley occupancy of AlAs 2D electrons, our improved systems help bring a wider scope to the investigation of low-disorder, interacting 2D electrons.
UR - http://www.scopus.com/inward/record.url?scp=79955983351&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955983351&partnerID=8YFLogxK
U2 - 10.1063/1.1456265
DO - 10.1063/1.1456265
M3 - Article
AN - SCOPUS:79955983351
SN - 0003-6951
VL - 80
SP - 1583
EP - 1585
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 9
ER -