Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

E. P. De Poortere, Y. P. Shkolnikov, E. Tutuc, S. J. Papadakis, M. Shayegan, E. Palm, T. Murphy

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Abstract

We report improvements in the quality of two-dimensional (2D) electrons in modulation-doped AlAs quantum wells, leading to electron mobilities as high as 31m2/Vs, a ten-fold increase over the mobility of previous AlAs samples. Confirming the quality of our quantum wells, developing fractional quantum Hall states are observed in the first Landau level at high order filling factors ν=2/5, 3/5, 3/7, 4/7, and 4/9, and at larger fillings, at ν=4/3, 5/3, 7/3, 8/3, 8/5, and 11/3. Thanks to the much larger effective mass and g factor of AlAs 2D electrons compared to GaAs, and to the possible multivalley occupancy of AlAs 2D electrons, our improved systems help bring a wider scope to the investigation of low-disorder, interacting 2D electrons.

Original languageEnglish (US)
Pages (from-to)1583-1585
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number9
DOIs
StatePublished - Mar 4 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    De Poortere, E. P., Shkolnikov, Y. P., Tutuc, E., Papadakis, S. J., Shayegan, M., Palm, E., & Murphy, T. (2002). Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells. Applied Physics Letters, 80(9), 1583-1585. https://doi.org/10.1063/1.1456265