Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

C. Adamo; L. Méchin; T. Heeg; M. Katz; S. Mercone; B. Guillet; S. Wu; J. M. Routoure; J. Schubert; W. Zander; R. Misra; P. Schiffer; X. Q. Pan; D. G. Schlom

doi:10.1063/1.4915486

Enhanced electrical and magnetic properties in La_0.7Sr_0.3MnO₃ thin films deposited on CaTiO₃-buffered silicon substrates

C. Adamo, L. Méchin, T. Heeg, M. Katz, S. Mercone, B. Guillet, S. Wu, J. M. Routoure, J. Schubert, W. Zander, R. Misra, P. Schiffer, X. Q. Pan, D. G. Schlom

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Abstract

We investigate the suitability of an epitaxial CaTiO₃ buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La_0.7Sr_0.3MnO₃ with silicon. The magnetic and electrical properties of La_0.7Sr_0.3MnO₃ films deposited by MBE on CaTiO₃-buffered silicon (CaTiO₃/Si) are compared with those deposited on SrTiO₃-buffered silicon (SrTiO₃/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO₃ buffer layer. These results are relevant to device applications of La_0.7Sr_0.3MnO₃ thin films on silicon substrates.

Original language	English (US)
Article number	062504
Journal	APL Materials
Volume	3
Issue number	6
DOIs	https://doi.org/10.1063/1.4915486
State	Published - Jun 1 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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Adamo, C., Méchin, L., Heeg, T., Katz, M., Mercone, S., Guillet, B., Wu, S., Routoure, J. M., Schubert, J., Zander, W., Misra, R., Schiffer, P., Pan, X. Q., & Schlom, D. G. (2015). Enhanced electrical and magnetic properties in La_0.7Sr_0.3MnO₃ thin films deposited on CaTiO₃-buffered silicon substrates. APL Materials, 3(6), Article 062504. https://doi.org/10.1063/1.4915486

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title = "Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates",

abstract = "We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.",

author = "C. Adamo and L. M{\'e}chin and T. Heeg and M. Katz and S. Mercone and B. Guillet and S. Wu and Routoure, {J. M.} and J. Schubert and W. Zander and R. Misra and P. Schiffer and Pan, {X. Q.} and Schlom, {D. G.}",

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T1 - Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

AU - Adamo, C.

AU - Méchin, L.

AU - Heeg, T.

AU - Katz, M.

AU - Mercone, S.

AU - Guillet, B.

AU - Wu, S.

AU - Routoure, J. M.

AU - Schubert, J.

AU - Zander, W.

AU - Misra, R.

AU - Schiffer, P.

AU - Pan, X. Q.

AU - Schlom, D. G.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

AB - We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

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Enhanced electrical and magnetic properties in La_0.7Sr_0.3MnO₃ thin films deposited on CaTiO₃-buffered silicon substrates

Abstract

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