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Enhanced boron doping for diamond growth in cylindrical CVD reactors using a Faraday cage

  • Y. Jiang
  • , M. Bose
  • , J. A. Cuenca
  • , D. L. Creedon
  • , J. Belcourt
  • , C. D. van Engers
  • , A. Nadarajah
  • , K. Ganesan
  • , J. C. McCallum
  • , K. Fox
  • , S. Prawer
  • , D. N. Jamieson
  • , A. Stacey

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the use of 3D-printed titanium Faraday cages in a cylindrical resonant cavity CVD reactor for the growth of heavily boron-doped single-crystalline superconducting diamond. We show that the cage enhances boron doping uniformity and provides control of the doping efficiency and growth rate by varying the distance between the plasma and the diamond surface. Using finite element modelling, we demonstrate that the Faraday cage focuses the electric field at the top of the cage whilst also suppressing the electric field inside the cage, thereby pinning the plasma at a fixed height above the sample. This eliminates plasma “hot spots” at the edges of the sample and creates a more uniform plasma electron and hydrogen radical distribution over the sample, resulting in a more uniform boron incorporation.

Original languageEnglish (US)
Article number113009
JournalDiamond and Related Materials
Volume160
DOIs
StatePublished - Dec 2025

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • General Physics and Astronomy
  • Materials Chemistry
  • Electrical and Electronic Engineering

Keywords

  • Boron doped diamond
  • Chemical vapour deposition
  • Diamond growth
  • FEM simulation
  • Superconductivity

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