Energy levels of very short-period (GaAs)n-(AlAs)n superlattices

Weikun Ge, M. D. Sturge, W. D. Schmidt, L. N. Pfeiffer, K. W. West

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The energy levels of very short-period (GaAs)n-(AlAs) n superlattices (n≤4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are Xx,y for n≤3 and Xz for n=4, respectively. (Here Xz is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al0.5Ga 0.5As shows very different behavior, showing that even for n=1 our samples are true superlattices.

Original languageEnglish (US)
Pages (from-to)55-57
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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