Energy levels of very short-period (GaAs)n-(AlAs)n superlattices

Weikun Ge; M. D. Sturge; W. D. Schmidt; L. N. Pfeiffer; K. W. West

doi:10.1063/1.103576

Energy levels of very short-period (GaAs)_n-(AlAs)_n superlattices

Weikun Ge, M. D. Sturge, W. D. Schmidt, L. N. Pfeiffer, K. W. West

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Abstract

The energy levels of very short-period (GaAs)_n-(AlAs) _n superlattices (n≤4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are X_x,y for n≤3 and X_z for n=4, respectively. (Here X_z is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al_0.5Ga _0.5As shows very different behavior, showing that even for n=1 our samples are true superlattices.

Original language	English (US)
Pages (from-to)	55-57
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	1
DOIs	https://doi.org/10.1063/1.103576
State	Published - 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103576

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title = "Energy levels of very short-period (GaAs)n-(AlAs)n superlattices",

abstract = "The energy levels of very short-period (GaAs)n-(AlAs) n superlattices (n≤4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are Xx,y for n≤3 and Xz for n=4, respectively. (Here Xz is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al0.5Ga 0.5As shows very different behavior, showing that even for n=1 our samples are true superlattices.",

author = "Weikun Ge and Sturge, {M. D.} and Schmidt, {W. D.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "1990",

doi = "10.1063/1.103576",

language = "English (US)",

volume = "57",

pages = "55--57",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Energy levels of very short-period (GaAs)n-(AlAs)n superlattices

AU - Ge, Weikun

AU - Sturge, M. D.

AU - Schmidt, W. D.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1990

Y1 - 1990

N2 - The energy levels of very short-period (GaAs)n-(AlAs) n superlattices (n≤4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are Xx,y for n≤3 and Xz for n=4, respectively. (Here Xz is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al0.5Ga 0.5As shows very different behavior, showing that even for n=1 our samples are true superlattices.

AB - The energy levels of very short-period (GaAs)n-(AlAs) n superlattices (n≤4) were investigated by photoluminescence (PL). The results show that these superlattices are type II but the lowest conduction bands are Xx,y for n≤3 and Xz for n=4, respectively. (Here Xz is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay, PL excitation, and PL under uniaxial stress confirm this identification. Al0.5Ga 0.5As shows very different behavior, showing that even for n=1 our samples are true superlattices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Energy levels of very short-period (GaAs)_n-(AlAs)_n superlattices

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