TY - JOUR
T1 - Energy level alignment at organic heterojunctions
T2 - Role of the charge neutrality level
AU - Vázquez, H.
AU - Gao, W.
AU - Flores, F.
AU - Kahn, Antoine
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2005/1
Y1 - 2005/1
N2 - We present a mechanism that explains the energy-level alignment at organic-organic (OO) semiconductor heterjunctions. Following our work on metal/organic interfaces, we extend the concepts of charge neutrality level (CNL) and induced density of interface states to OO interfaces, and propose that the energy-level alignment is driven by the alignment of the CNLs of the two organic semiconductors. The initial offset between the CNLs gives rise to a charge transfer across the interface, which induces an interface dipole and tends to align the CNLs. The initial CNL difference is reduced according to the screening factor S, a quantity related to the dielectric functions of the organic materials. Good quantitative agreement with experiment is found. Our model thus provides a simple and intuitive, yet general, explanation of the energy-level alignment at organic semiconductor heterojunctions.
AB - We present a mechanism that explains the energy-level alignment at organic-organic (OO) semiconductor heterjunctions. Following our work on metal/organic interfaces, we extend the concepts of charge neutrality level (CNL) and induced density of interface states to OO interfaces, and propose that the energy-level alignment is driven by the alignment of the CNLs of the two organic semiconductors. The initial offset between the CNLs gives rise to a charge transfer across the interface, which induces an interface dipole and tends to align the CNLs. The initial CNL difference is reduced according to the screening factor S, a quantity related to the dielectric functions of the organic materials. Good quantitative agreement with experiment is found. Our model thus provides a simple and intuitive, yet general, explanation of the energy-level alignment at organic semiconductor heterojunctions.
UR - http://www.scopus.com/inward/record.url?scp=15744366155&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=15744366155&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.71.041306
DO - 10.1103/PhysRevB.71.041306
M3 - Article
AN - SCOPUS:15744366155
SN - 1098-0121
VL - 71
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 4
M1 - 041306
ER -