Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

Chiyui Ahn; Scott W. Fong; Yongsung Kim; Seunghyun Lee; Aditya Sood; Christopher M. Neumann; Mehdi Asheghi; Kenneth E. Goodson; Eric Pop; H. S.Philip Wong

doi:10.1021/acs.nanolett.5b02661

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

Chiyui Ahn, Scott W. Fong, Yongsung Kim, Seunghyun Lee, Aditya Sood, Christopher M. Neumann, Mehdi Asheghi, Kenneth E. Goodson, Eric Pop, H. S.Philip Wong

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge₂Sb₂Te₅ (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 10⁵ cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.

Original language	English (US)
Pages (from-to)	6809-6814
Number of pages	6
Journal	Nano Letters
Volume	15
Issue number	10
DOIs	https://doi.org/10.1021/acs.nanolett.5b02661
State	Published - Oct 14 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Materials Science

Keywords

Graphene
Joule heating
phase-change memory
reset current
thermal boundary resistance

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10.1021/acs.nanolett.5b02661

Cite this

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title = "Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier",

abstract = "Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 105 cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.",

keywords = "Graphene, Joule heating, phase-change memory, reset current, thermal boundary resistance",

author = "Chiyui Ahn and Fong, {Scott W.} and Yongsung Kim and Seunghyun Lee and Aditya Sood and Neumann, {Christopher M.} and Mehdi Asheghi and Goodson, {Kenneth E.} and Eric Pop and Wong, {H. S.Philip}",

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AU - Ahn, Chiyui

AU - Fong, Scott W.

AU - Kim, Yongsung

AU - Lee, Seunghyun

AU - Sood, Aditya

AU - Neumann, Christopher M.

AU - Asheghi, Mehdi

AU - Goodson, Kenneth E.

AU - Pop, Eric

AU - Wong, H. S.Philip

PY - 2015/10/14

Y1 - 2015/10/14

N2 - Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 105 cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.

AB - Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 105 cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.

KW - Graphene

KW - Joule heating

KW - phase-change memory

KW - reset current

KW - thermal boundary resistance

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JO - Nano Letters

JF - Nano Letters

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ER -

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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