Energy barriers, adatom diffusion and field-induced disordering of the Ge(111)c(2 × 8) surface at T ≈ 300°C

Noboru Takeuchi; A. Selloni; E. Tosatti

doi:10.1016/0039-6028(94)91488-5

Energy barriers, adatom diffusion and field-induced disordering of the Ge(111)c(2 × 8) surface at T ≈ 300°C

Noboru Takeuchi, A. Selloni, E. Tosatti

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We use ab initio molecular dynamics to study Ge(111)c(2 × 8) at ∼ 300°C. At this temperature the defect-free surface disorders by a correlated diffusion of the adatoms along the [110] direction. The anisotropy of the diffusion arises from the special bonding topology of the c(2 × 8) structure. As in stable Ge(111)c(2 × 8) charge transfer plays an important role in the diffusion process.

Original language	English (US)
Pages (from-to)	755-760
Number of pages	6
Journal	Surface Science
Volume	307-309
Issue number	PART B
DOIs	https://doi.org/10.1016/0039-6028(94)91488-5
State	Published - Apr 20 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)91488-5

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title = "Energy barriers, adatom diffusion and field-induced disordering of the Ge(111)c(2 × 8) surface at T ≈ 300°C",

abstract = "We use ab initio molecular dynamics to study Ge(111)c(2 × 8) at ∼ 300°C. At this temperature the defect-free surface disorders by a correlated diffusion of the adatoms along the [110] direction. The anisotropy of the diffusion arises from the special bonding topology of the c(2 × 8) structure. As in stable Ge(111)c(2 × 8) charge transfer plays an important role in the diffusion process.",

author = "Noboru Takeuchi and A. Selloni and E. Tosatti",

note = "Funding Information: This work was supported by INFM, by the EEC through contracts ERBCHBGCT920180, ERBCHRXCT920062 and ERBCHRXCT930342, and also in part by the Research Office of the US Army. Computations were carried out on the NEC-SX3 supercomputer of the Swiss Center for Scientific Computations (CSCS). One of us (N.T.) acknowledges a postdoctoral fellowship from the ICTP.",

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doi = "10.1016/0039-6028(94)91488-5",

language = "English (US)",

volume = "307-309",

pages = "755--760",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Energy barriers, adatom diffusion and field-induced disordering of the Ge(111)c(2 × 8) surface at T ≈ 300°C

AU - Takeuchi, Noboru

AU - Selloni, A.

AU - Tosatti, E.

N1 - Funding Information: This work was supported by INFM, by the EEC through contracts ERBCHBGCT920180, ERBCHRXCT920062 and ERBCHRXCT930342, and also in part by the Research Office of the US Army. Computations were carried out on the NEC-SX3 supercomputer of the Swiss Center for Scientific Computations (CSCS). One of us (N.T.) acknowledges a postdoctoral fellowship from the ICTP.

PY - 1994/4/20

Y1 - 1994/4/20

N2 - We use ab initio molecular dynamics to study Ge(111)c(2 × 8) at ∼ 300°C. At this temperature the defect-free surface disorders by a correlated diffusion of the adatoms along the [110] direction. The anisotropy of the diffusion arises from the special bonding topology of the c(2 × 8) structure. As in stable Ge(111)c(2 × 8) charge transfer plays an important role in the diffusion process.

AB - We use ab initio molecular dynamics to study Ge(111)c(2 × 8) at ∼ 300°C. At this temperature the defect-free surface disorders by a correlated diffusion of the adatoms along the [110] direction. The anisotropy of the diffusion arises from the special bonding topology of the c(2 × 8) structure. As in stable Ge(111)c(2 × 8) charge transfer plays an important role in the diffusion process.

UR - https://www.scopus.com/pages/publications/0028409565

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U2 - 10.1016/0039-6028(94)91488-5

DO - 10.1016/0039-6028(94)91488-5

M3 - Article

AN - SCOPUS:0028409565

SN - 0039-6028

VL - 307-309

SP - 755

EP - 760

JO - Surface Science

JF - Surface Science

IS - PART B

ER -

Energy barriers, adatom diffusion and field-induced disordering of the Ge(111)c(2 × 8) surface at T ≈ 300°C

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