Energy barriers, adatom diffusion and field-induced disordering of the Ge(111)c(2 × 8) surface at T ≈ 300°C

Noboru Takeuchi, A. Selloni, E. Tosatti

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We use ab initio molecular dynamics to study Ge(111)c(2 × 8) at ∼ 300°C. At this temperature the defect-free surface disorders by a correlated diffusion of the adatoms along the [110] direction. The anisotropy of the diffusion arises from the special bonding topology of the c(2 × 8) structure. As in stable Ge(111)c(2 × 8) charge transfer plays an important role in the diffusion process.

Original languageEnglish (US)
Pages (from-to)755-760
Number of pages6
JournalSurface Science
Volume307-309
Issue numberPART B
DOIs
StatePublished - Apr 20 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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