Emissivity of rough silicon surfaces: measurement and calculations

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The directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.

Original languageEnglish (US)
Pages (from-to)29-34
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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