Emissivity of rough silicon surfaces: Measurement and calculations

H. Xu; J. C. Sturm

doi:10.1557/proc-389-301

Emissivity of rough silicon surfaces: Measurement and calculations

Research output: Contribution to journal › Conference article › peer-review

Abstract

The directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.

Original language	English (US)
Pages (from-to)	301-306
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	389
DOIs	https://doi.org/10.1557/proc-389-301
State	Published - 1995
Event	Proceedings of the Spring Meeting on MRS - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 20 1995

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-389-301

Cite this

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title = "Emissivity of rough silicon surfaces: Measurement and calculations",

abstract = "The directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.",

author = "H. Xu and Sturm, {J. C.}",

year = "1995",

doi = "10.1557/proc-389-301",

language = "English (US)",

volume = "389",

pages = "301--306",

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note = "Proceedings of the Spring Meeting on MRS ; Conference date: 17-04-1995 Through 20-04-1995",

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T1 - Emissivity of rough silicon surfaces

T2 - Proceedings of the Spring Meeting on MRS

AU - Xu, H.

AU - Sturm, J. C.

PY - 1995

Y1 - 1995

N2 - The directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.

AB - The directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.

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U2 - 10.1557/proc-389-301

DO - 10.1557/proc-389-301

M3 - Conference article

AN - SCOPUS:0029206338

SN - 0272-9172

VL - 389

SP - 301

EP - 306

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 17 April 1995 through 20 April 1995

ER -

Emissivity of rough silicon surfaces: Measurement and calculations

Abstract

All Science Journal Classification (ASJC) codes

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