Abstract
We report on magneto-transport measurements of a systematic set of five GaAs/AlGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm. We find that as L is decreased into the regime where the zero-field mobility is limited due to surface roughness, a reentrant insulating phase around filling fraction ν = frac(1, 3) emerges. As L is decreased further, only a single insulating phase is observed for ν < 1.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1504-1506 |
| Number of pages | 3 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 40 |
| Issue number | 5 |
| DOIs | |
| State | Published - Mar 2008 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Keywords
- Narrow quantum wells
- Quantum Hall effect
- Reentrant insulating phases