Emergence of a reentrant insulating phase around ν = frac(1, 3) in a series of GaAs/AlGaAs quantum wells with varying well widths

D. R. Luhman; W. Li; T. M. Lu; D. C. Tsui; L. N. Pfeiffer; K. W. West

doi:10.1016/j.physe.2007.09.069

Emergence of a reentrant insulating phase around ν = frac(1, 3) in a series of GaAs/AlGaAs quantum wells with varying well widths

D. R. Luhman, W. Li, T. M. Lu, D. C. Tsui, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on magneto-transport measurements of a systematic set of five GaAs/AlGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm. We find that as L is decreased into the regime where the zero-field mobility is limited due to surface roughness, a reentrant insulating phase around filling fraction ν = frac(1, 3) emerges. As L is decreased further, only a single insulating phase is observed for ν < 1.

Original language	English (US)
Pages (from-to)	1504-1506
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2007.09.069
State	Published - Mar 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Narrow quantum wells
Quantum Hall effect
Reentrant insulating phases

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10.1016/j.physe.2007.09.069

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title = "Emergence of a reentrant insulating phase around ν = frac(1, 3) in a series of GaAs/AlGaAs quantum wells with varying well widths",

abstract = "We report on magneto-transport measurements of a systematic set of five GaAs/AlGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm. We find that as L is decreased into the regime where the zero-field mobility is limited due to surface roughness, a reentrant insulating phase around filling fraction ν = frac(1, 3) emerges. As L is decreased further, only a single insulating phase is observed for ν < 1.",

keywords = "Narrow quantum wells, Quantum Hall effect, Reentrant insulating phases",

author = "Luhman, {D. R.} and W. Li and Lu, {T. M.} and Tsui, {D. C.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "2008",

month = mar,

doi = "10.1016/j.physe.2007.09.069",

language = "English (US)",

volume = "40",

pages = "1504--1506",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Emergence of a reentrant insulating phase around ν = frac(1, 3) in a series of GaAs/AlGaAs quantum wells with varying well widths

AU - Luhman, D. R.

AU - Li, W.

AU - Lu, T. M.

AU - Tsui, D. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2008/3

Y1 - 2008/3

N2 - We report on magneto-transport measurements of a systematic set of five GaAs/AlGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm. We find that as L is decreased into the regime where the zero-field mobility is limited due to surface roughness, a reentrant insulating phase around filling fraction ν = frac(1, 3) emerges. As L is decreased further, only a single insulating phase is observed for ν < 1.

AB - We report on magneto-transport measurements of a systematic set of five GaAs/AlGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm. We find that as L is decreased into the regime where the zero-field mobility is limited due to surface roughness, a reentrant insulating phase around filling fraction ν = frac(1, 3) emerges. As L is decreased further, only a single insulating phase is observed for ν < 1.

KW - Narrow quantum wells

KW - Quantum Hall effect

KW - Reentrant insulating phases

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VL - 40

SP - 1504

EP - 1506

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 5

ER -

Emergence of a reentrant insulating phase around ν = frac(1, 3) in a series of GaAs/AlGaAs quantum wells with varying well widths

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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