Elucidating the mechanism of nanocone and nanohole formation on Si by optical trap assisted nanopatterning

Ting Hsuan Chen, Yu Cheng Tsai, Romain Fardel, Craig B. Arnold

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using optical trap-assisted nanopatterning (OTAN), we are able to control the formation of nanocones and nanoholes in Silicon. The effects are described by integrating FDTD and heat transfer modeling to account for the nanoscale features.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period5/10/155/15/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Keywords

  • Charge carrier processes
  • Heat transfer
  • Nanopatterning
  • Optical films
  • Silicon
  • Surface morphology
  • Ultrafast optics

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  • Cite this

    Chen, T. H., Tsai, Y. C., Fardel, R., & Arnold, C. B. (2015). Elucidating the mechanism of nanocone and nanohole formation on Si by optical trap assisted nanopatterning. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7182898] (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..