Electronic vacancy states in silicon by the chemical pseudopotential method

F. Casula; S. Ossicini; A. Selloni

doi:10.1016/0038-1098(78)90345-9

Electronic vacancy states in silicon by the chemical pseudopotential method

F. Casula, S. Ossicini, A. Selloni

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential method by creating a vacancy in a large crystal unit cell containing up to 54 atoms. A localized vacancy state is found in the forbidden gap and its energy is shown to be convergent with respect to the size of the cell. The density of states of the valence band is modified by the presence of the vacancy with additional peaks which give charge localization on the vacany nearest neighbour atoms.

Original language	English (US)
Pages (from-to)	141-145
Number of pages	5
Journal	Solid State Communications
Volume	28
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(78)90345-9
State	Published - Oct 1978
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0038-1098(78)90345-9

Cite this

@article{f3e52399848740cf93e818642c7caeef,

title = "Electronic vacancy states in silicon by the chemical pseudopotential method",

abstract = "The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential method by creating a vacancy in a large crystal unit cell containing up to 54 atoms. A localized vacancy state is found in the forbidden gap and its energy is shown to be convergent with respect to the size of the cell. The density of states of the valence band is modified by the presence of the vacancy with additional peaks which give charge localization on the vacany nearest neighbour atoms.",

author = "F. Casula and S. Ossicini and A. Selloni",

year = "1978",

month = oct,

doi = "10.1016/0038-1098(78)90345-9",

language = "English (US)",

volume = "28",

pages = "141--145",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Electronic vacancy states in silicon by the chemical pseudopotential method

AU - Casula, F.

AU - Ossicini, S.

AU - Selloni, A.

PY - 1978/10

Y1 - 1978/10

N2 - The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential method by creating a vacancy in a large crystal unit cell containing up to 54 atoms. A localized vacancy state is found in the forbidden gap and its energy is shown to be convergent with respect to the size of the cell. The density of states of the valence band is modified by the presence of the vacancy with additional peaks which give charge localization on the vacany nearest neighbour atoms.

AB - The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential method by creating a vacancy in a large crystal unit cell containing up to 54 atoms. A localized vacancy state is found in the forbidden gap and its energy is shown to be convergent with respect to the size of the cell. The density of states of the valence band is modified by the presence of the vacancy with additional peaks which give charge localization on the vacany nearest neighbour atoms.

UR - http://www.scopus.com/inward/record.url?scp=0018027492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018027492&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(78)90345-9

DO - 10.1016/0038-1098(78)90345-9

M3 - Article

AN - SCOPUS:0018027492

SN - 0038-1098

VL - 28

SP - 141

EP - 145

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Electronic vacancy states in silicon by the chemical pseudopotential method

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this