Electronic transport studies of a systematic series of GaAsAlGaAs quantum wells

The results of experimental transport studies involving a series of five narrow Al0.1 Ga0.9 AsGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm are reported. The total transport scattering rate measured in thin AlGaAsGaAs quantum wells is typically limited by electron scattering from the interfacial roughness of the quantum well. For a relatively low constant electron density (ne ∼5.8× 1010 cm-2), the authors find that interfacial roughness is the dominant scattering mechanism for L≤16.0 nm and describe the data using a finite quantum well model with adjustable interfacial roughness parameters. Temperature dependence data are also presented.