Electronic transport and quantum hall effect in bipolar graphene p-n-p junctions

Barbaros Özyilmaz, Pablo Jarillo-Herrero, Dmitri Efetov, Dmitry A. Abanin, Leonid S. Levitov, Philip Kim

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Abstract

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

Original languageEnglish (US)
Article number166804
JournalPhysical review letters
Volume99
Issue number16
DOIs
StatePublished - Oct 17 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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