TY - JOUR
T1 - Electronic structure of Vanadium pentoxide
T2 - An efficient hole injector for organic electronic materials
AU - Meyer, J.
AU - Zilberberg, K.
AU - Riedl, T.
AU - Kahn, A.
N1 - Funding Information:
Work in Princeton was supported by the National Science Foundation Grant No. DMR-0705920 (A.K), the Princeton MRSEC of the NSF Grant No. DMR-0819860 (A.K), and as part of the Center for Interface Science: Solar Electric Materials, an Energy Frontier Research Center funded the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Award Number DE-SC0001084 (J.M). J.M. acknowledges the Deutsche Forschungsgemeinschaft (DFG) for generous support within the postdoctoral fellowship program.
PY - 2011/8/1
Y1 - 2011/8/1
N2 - The electronic structure of Vanadium pentoxide (V2O 5), a transition metal oxide with an exceedingly large work function of 7.0 eV, is studied via ultraviolet, inverse and x-ray photoemission spectroscopy. Very deep lying electronic states with electron affinity and ionization energy (IE) of 6.7 eV and 9.5 eV, respectively, are found. Contamination due to air exposure changes the electronic structure due to the partial reduction of vanadium to V4 state. It is shown that V 2O5 is a n-type material that can be used for efficient hole-injection into materials with an IE larger than 6 eV, such as 4,4′-Bis(N-carbazolyl)-1,1′-bipheny (CBP). The formation of an interface dipole and band bending is found to lead to a very small energy barrier between the transport levels at the V2O5/CBP interface.
AB - The electronic structure of Vanadium pentoxide (V2O 5), a transition metal oxide with an exceedingly large work function of 7.0 eV, is studied via ultraviolet, inverse and x-ray photoemission spectroscopy. Very deep lying electronic states with electron affinity and ionization energy (IE) of 6.7 eV and 9.5 eV, respectively, are found. Contamination due to air exposure changes the electronic structure due to the partial reduction of vanadium to V4 state. It is shown that V 2O5 is a n-type material that can be used for efficient hole-injection into materials with an IE larger than 6 eV, such as 4,4′-Bis(N-carbazolyl)-1,1′-bipheny (CBP). The formation of an interface dipole and band bending is found to lead to a very small energy barrier between the transport levels at the V2O5/CBP interface.
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U2 - 10.1063/1.3611392
DO - 10.1063/1.3611392
M3 - Article
AN - SCOPUS:80051943981
SN - 0021-8979
VL - 110
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
M1 - 033710
ER -