Electronic structure of two crystallographic forms

C. Felser, R. Cava

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

Electronic structure calculations have been performed to explain the difference in the electronic properties of two crystallographic forms of (Formula presented) The calculations can explain the qualitatively different resistivities of isoelectronic (Formula presented)- and (Formula presented)-(Formula presented) below 100 K. The difference in symmetry between the hexagonal four-layer (Formula presented) and the rhombohedral nine-layer compound allows the formation of a gap for the later. The electronic structure of these hexagonal perovskites is compared with the more familiar cubic perovskite (Formula presented).

Original languageEnglish (US)
Pages (from-to)10005-10009
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number15
DOIs
StatePublished - Jan 1 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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