Abstract

The electronic structure of the poly(3-hexylthiophene):indene-C 60 bisadduct (P3HT:ICBA) blend is investigated with direct and inverse photoemission spectroscopy. The energy gap between the lowest unoccupied molecular orbital (LUMO) of ICBA and the highest occupied molecular orbital (HOMO) of P3HT, which is central to the performance of photovoltaic cells made with this blend, is found equal to 1.68 eV. This value is larger than the difference between the ionization energy of the donor and the electron affinity of the acceptor, implying the existence of an interface dipole barrier between these two materials. Complementary contact potential difference measurements are done with a Kelvin probe in the dark on similar donor/acceptor pairs, e.g., P3HT:C60 and copper phthalocyanine (CuPc):C60, and confirm the existence of a dipole at these interfaces. It is estimated that a 0.3-0.4 eV ground state dipole exists at the P3HT:ICBA interface.

Original languageEnglish (US)
Article number043719
JournalJournal of Applied Physics
Volume110
Issue number4
DOIs
StatePublished - Aug 15 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electronic structure of the poly(3-hexylthiophene):indene-C<sub>60</sub> bisadduct bulk heterojunction'. Together they form a unique fingerprint.

  • Cite this