Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method

F. Casula, S. Ossicini, Annabella Selloni

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by the chemical pseudopotential method. We use a minimal basis set of localized orbitals and an atomic-like crystal potential to compute the interaction parameters and include self-consistency. Results are compared with other more involved theoretical calculations with satisfactory agreement.

Original languageEnglish (US)
Pages (from-to)309-313
Number of pages5
JournalSolid State Communications
Volume30
Issue number5
DOIs
StatePublished - Jan 1 1979
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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