Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method

F. Casula; S. Ossicini; Annabella Selloni

doi:10.1016/0038-1098(79)90083-8

Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method

F. Casula, S. Ossicini, Annabella Selloni

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6 Scopus citations

Abstract

The electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by the chemical pseudopotential method. We use a minimal basis set of localized orbitals and an atomic-like crystal potential to compute the interaction parameters and include self-consistency. Results are compared with other more involved theoretical calculations with satisfactory agreement.

Original language	English (US)
Pages (from-to)	309-313
Number of pages	5
Journal	Solid State Communications
Volume	30
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(79)90083-8
State	Published - May 1979
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(79)90083-8

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title = "Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method",

abstract = "The electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by the chemical pseudopotential method. We use a minimal basis set of localized orbitals and an atomic-like crystal potential to compute the interaction parameters and include self-consistency. Results are compared with other more involved theoretical calculations with satisfactory agreement.",

author = "F. Casula and S. Ossicini and Annabella Selloni",

year = "1979",

month = may,

doi = "10.1016/0038-1098(79)90083-8",

language = "English (US)",

volume = "30",

pages = "309--313",

journal = "Solid State Communications",

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number = "5",

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T1 - Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method

AU - Casula, F.

AU - Ossicini, S.

AU - Selloni, Annabella

PY - 1979/5

Y1 - 1979/5

N2 - The electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by the chemical pseudopotential method. We use a minimal basis set of localized orbitals and an atomic-like crystal potential to compute the interaction parameters and include self-consistency. Results are compared with other more involved theoretical calculations with satisfactory agreement.

AB - The electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by the chemical pseudopotential method. We use a minimal basis set of localized orbitals and an atomic-like crystal potential to compute the interaction parameters and include self-consistency. Results are compared with other more involved theoretical calculations with satisfactory agreement.

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U2 - 10.1016/0038-1098(79)90083-8

DO - 10.1016/0038-1098(79)90083-8

M3 - Article

AN - SCOPUS:0018467905

SN - 0038-1098

VL - 30

SP - 309

EP - 313

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method

Abstract

All Science Journal Classification (ASJC) codes

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