Electronic structure of BaSn1-xSbxO3, for 0.0≤x≤0.2

M. Eibschutz, R. J. Cava, J. J. Krajewski, W. F. Peck, W. M. Reiff

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Abstract

The Mössbauer effect of the 37.2 keV transition of 121Sb and the 23.88 keV γ transition of 119Sn has been employed to study the electronic configuration of Sb and Sn ions in the conducting materials BaSn1-xSbxO3 for 0≤x≤0.2. A single-resonance absorption line is observed for each isotope. The isomer shifts change slightly with Sb content and fall in the region corresponding to Sb(V) and Sn(IV) valence states, respectively. The Sb isomer shift (IS) of 7.5 mm/s is significantly depressed (∼1 mm/s) relative to its value in a typical Sb(V)O6 chromophore and indicates a high degree of covalency, corresponding to significant 5sm5pn hybridization. The Sn IS of 0.1 mm/s indicates that the Sn atoms in BaSn1-xSb xO3 are more covalent than in BaSnO3. Charge disproportionation of the Sn and Sb into Sn(II) and Sn(IV) or Sb(III) and Sb(V) has not been observed.

Original languageEnglish (US)
Pages (from-to)830-832
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number7
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Eibschutz, M., Cava, R. J., Krajewski, J. J., Peck, W. F., & Reiff, W. M. (1992). Electronic structure of BaSn1-xSbxO3, for 0.0≤x≤0.2. Applied Physics Letters, 60(7), 830-832. https://doi.org/10.1063/1.106528