Electronic structure, diffusion, and p-doping at the Au/F16CuPc interface

Chongfei Shen, Antoine Kahn

Research output: Contribution to journalArticle

115 Scopus citations

Abstract

Interfaces formed by evaporating Au on copper hexadecafluorophthalocyanine (F16CuPc) and F16CuPc on Au are studied via ultraviolet photoemission spectroscopy and x-ray photoemission spectroscopy. The energy position of the molecular levels is found to depend on the deposition sequence. The Au-on-F16CuPc interface exhibits a lower hole injection barrier than the F16CuPc-on-Au interface. This behavior is attributed to the diffusion of Au into the organic matrix at the Au-on-top interface, in which they behave as acceptors. Band bending consistent with p doping, i.e., upward away from the metal interface, is observed in Au-doped F16CuPc films. Current-voltage measurements on Au/F16CuPc/Au sandwich structures show a higher electron injection barrier at the top Au electrode contact than at the bottom electrode contact, also consistent with p-type doping F16CuPc by Au.

Original languageEnglish (US)
Pages (from-to)4549-4554
Number of pages6
JournalJournal of Applied Physics
Volume90
Issue number9
DOIs
StatePublished - Nov 1 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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