Electronic structure basis for the extraordinary magnetoresistance in WTe2

I. Pletikosić, Mazhar N. Ali, A. V. Fedorov, R. J. Cava, T. Valla

Research output: Contribution to journalArticle

170 Scopus citations

Abstract

The electronic structure basis of the extremely large magnetoresistance in layered nonmagnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at low temperatures, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe2 was identified.

Original languageEnglish (US)
Article number216601
JournalPhysical review letters
Volume113
Issue number21
DOIs
StatePublished - Nov 19 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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