Electronic structure and spectra of heavily doped n-type silicon

Annabella Selloni, Sokrates T. Pantelides

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


Theoretical calculations have so far focused on the band-gap reductions caused by heavy doping, but comparisons with experiment have not been informative because of large variations in values extracted from data on the basis of simple models. Calculations of photoluminescence spectra are reported which, for the first time, allow direct comparison with experimental data. It is found that intervalley scattering, previously assumed negligible, is essential in order to reproduce the major experimental features and trends.

Original languageEnglish (US)
Pages (from-to)586-589
Number of pages4
JournalPhysical review letters
Issue number8
StatePublished - 1982

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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