Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces

Sushobhan Avasthi, Yabing Qi, Grigory K. Vertelov, Jeffrey Schwartz, Antoine Kahn, James C. Sturm

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

In this work we demonstrate that the room-temperature deposition of the organic molecule 9,10-phenanthrenequinone (PQ) reduces the surface defect density of the silicon (100) surface by chemically bonding to the surface dangling bonds. Using various spectroscopic measurements we have investigated the electronic structure and band alignment properties of the PQ/Si interface. The band-bending at the PQ-passivated silicon surface is negligible for both n- and p-type substrates, demonstrating a low density of surface defects. Finally we show that PQ forms a semiconducting wide-bandgap type-I heterojunction with silicon.

Original languageEnglish (US)
Pages (from-to)1308-1312
Number of pages5
JournalSurface Science
Volume605
Issue number13-14
DOIs
StatePublished - Jul 1 2011

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Keywords

  • 9,10-phenanthrenequinone
  • Heterojunction
  • Passivation
  • Silicon-organic

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