Electronic states in a disordered metal: Magnetotransport in doped germanium

T. F. Rosenbaum; S. Pepke; R. N. Bhatt; T. V. Ramakrishnan

doi:10.1103/PhysRevB.42.11214

Electronic states in a disordered metal: Magnetotransport in doped germanium

T. F. Rosenbaum
, S. Pepke
, R. N. Bhatt
, T. V. Ramakrishnan

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

Original language	English (US)
Pages (from-to)	11214-11217
Number of pages	4
Journal	Physical Review B
Volume	42
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.42.11214
State	Published - Dec 15 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Access to Document

10.1103/PhysRevB.42.11214

Cite this

@article{a785ff8e3fb945c79798be4eef461942,

title = "Electronic states in a disordered metal: Magnetotransport in doped germanium",

abstract = "We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.",

author = "Rosenbaum, \{T. F.\} and S. Pepke and Bhatt, \{R. N.\} and Ramakrishnan, \{T. V.\}",

year = "1990",

month = dec,

day = "15",

doi = "10.1103/PhysRevB.42.11214",

language = "English (US)",

volume = "42",

pages = "11214--11217",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "17",

}

TY - JOUR

T1 - Electronic states in a disordered metal

T2 - Magnetotransport in doped germanium

AU - Rosenbaum, T. F.

AU - Pepke, S.

AU - Bhatt, R. N.

AU - Ramakrishnan, T. V.

PY - 1990/12/15

Y1 - 1990/12/15

N2 - We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

AB - We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

UR - https://www.scopus.com/pages/publications/35949010588

UR - https://www.scopus.com/pages/publications/35949010588#tab=citedBy

U2 - 10.1103/PhysRevB.42.11214

DO - 10.1103/PhysRevB.42.11214

M3 - Article

AN - SCOPUS:35949010588

SN - 0163-1829

VL - 42

SP - 11214

EP - 11217

JO - Physical Review B

JF - Physical Review B

IS - 17

ER -

Electronic states in a disordered metal: Magnetotransport in doped germanium

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this