Electronic states in a disordered metal: Magnetotransport in doped germanium

T. F. Rosenbaum, S. Pepke, R. N. Bhatt, T. V. Ramakrishnan

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

Original languageEnglish (US)
Pages (from-to)11214-11217
Number of pages4
JournalPhysical Review B
Issue number17
StatePublished - Dec 15 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


Dive into the research topics of 'Electronic states in a disordered metal: Magnetotransport in doped germanium'. Together they form a unique fingerprint.

Cite this