Electronic states at aluminum nitride (0001 )-1 x 1 surfaces

C. I. Wu, A. Kahn

Research output: Contribution to journalArticlepeer-review

68 Scopus citations


We investigate the electronic structure of aluminum nitride (0001)-1 X 1 surfaces via direct and inverse photoemission spectroscopy. Bulk and surface sensitive measurements on clean surfaces and surfaces exposed to oxygen or cesium demonstrate the existence of filled and empty surface states which extend more than 1 eV beyond the valence- and conduction-band edges. The filled states are tentatively associated with Al dangling or back bonds. The measurement of the top of the valence band upon removal of the filled states leads to a determination of an electron affinity equal to 1.9±0.2eV. The empty surface states are presumed to play a role in the pinning of the Fermi level in the upper part of the gap and are consistent with the anticipated metallicity of the surface.

Original languageEnglish (US)
Pages (from-to)546-548
Number of pages3
JournalApplied Physics Letters
Issue number4
StatePublished - Jan 25 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Electronic states at aluminum nitride (0001 )-1 x 1 surfaces'. Together they form a unique fingerprint.

Cite this