Abstract
The electronic structure of Si(111)-2x1 is studied selfconsistently for several values of the reconstruction parameters within Haneman's model. The derivatives of the dangling-bond bands with respect to the surface atom displacements are calculated and the surface electron-phonon coupling is estimated.
Original language | English (US) |
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Pages (from-to) | 495-499 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 37 |
Issue number | 6 |
DOIs | |
State | Published - Feb 1981 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry