Electronic lifetimes in excited state Landau levels

I. Maran; W. Seidenbusch; E. Gornik; G. Weimann; M. Shayegan

doi:10.1088/0268-1242/9/5S/080

Electronic lifetimes in excited state Landau levels

I. Maran, W. Seidenbusch, E. Gornik, G. Weimann, M. Shayegan

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17 Scopus citations

Abstract

We have determined for the first time the inter-Landau level lifetimes in GaAs/GaAlAs heterostructures in the spin polarized region (filling factor <1). Intensity-dependent cyclotron resonance absorption has been measured using a high-intensity optically pumped far-infrared (FIR) laser. A detailed analysis of the lineshape of the cyclotron resonance absorption within a Drude model shows saturation at intensities of 0.1 W cm^-2. The electronic lifetimes deduced using a three-level model depend inversely on the electron concentration in the excited Landau level, indicating electron-electron scattering to be the dominant relaxation mechanism.

Original language	English (US)
Article number	080
Pages (from-to)	700-703
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5 S
DOIs	https://doi.org/10.1088/0268-1242/9/5S/080
State	Published - 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/9/5S/080

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title = "Electronic lifetimes in excited state Landau levels",

abstract = "We have determined for the first time the inter-Landau level lifetimes in GaAs/GaAlAs heterostructures in the spin polarized region (filling factor <1). Intensity-dependent cyclotron resonance absorption has been measured using a high-intensity optically pumped far-infrared (FIR) laser. A detailed analysis of the lineshape of the cyclotron resonance absorption within a Drude model shows saturation at intensities of 0.1 W cm-2. The electronic lifetimes deduced using a three-level model depend inversely on the electron concentration in the excited Landau level, indicating electron-electron scattering to be the dominant relaxation mechanism.",

author = "I. Maran and W. Seidenbusch and E. Gornik and G. Weimann and M. Shayegan",

year = "1994",

doi = "10.1088/0268-1242/9/5S/080",

language = "English (US)",

volume = "9",

pages = "700--703",

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T1 - Electronic lifetimes in excited state Landau levels

AU - Maran, I.

AU - Seidenbusch, W.

AU - Gornik, E.

AU - Weimann, G.

AU - Shayegan, M.

PY - 1994

Y1 - 1994

N2 - We have determined for the first time the inter-Landau level lifetimes in GaAs/GaAlAs heterostructures in the spin polarized region (filling factor <1). Intensity-dependent cyclotron resonance absorption has been measured using a high-intensity optically pumped far-infrared (FIR) laser. A detailed analysis of the lineshape of the cyclotron resonance absorption within a Drude model shows saturation at intensities of 0.1 W cm-2. The electronic lifetimes deduced using a three-level model depend inversely on the electron concentration in the excited Landau level, indicating electron-electron scattering to be the dominant relaxation mechanism.

AB - We have determined for the first time the inter-Landau level lifetimes in GaAs/GaAlAs heterostructures in the spin polarized region (filling factor <1). Intensity-dependent cyclotron resonance absorption has been measured using a high-intensity optically pumped far-infrared (FIR) laser. A detailed analysis of the lineshape of the cyclotron resonance absorption within a Drude model shows saturation at intensities of 0.1 W cm-2. The electronic lifetimes deduced using a three-level model depend inversely on the electron concentration in the excited Landau level, indicating electron-electron scattering to be the dominant relaxation mechanism.

UR - https://www.scopus.com/pages/publications/0028429455

UR - https://www.scopus.com/inward/citedby.url?scp=0028429455&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/9/5S/080

DO - 10.1088/0268-1242/9/5S/080

M3 - Article

AN - SCOPUS:0028429455

SN - 0268-1242

VL - 9

SP - 700

EP - 703

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5 S

M1 - 080

ER -

Electronic lifetimes in excited state Landau levels

Abstract

All Science Journal Classification (ASJC) codes

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