Electronic lifetimes in excited state Landau levels

I. Maran, W. Seidenbusch, E. Gornik, G. Weimann, M. Shayegan

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

We have determined for the first time the inter-Landau level lifetimes in GaAs/GaAlAs heterostructures in the spin polarized region (filling factor <1). Intensity-dependent cyclotron resonance absorption has been measured using a high-intensity optically pumped far-infrared (FIR) laser. A detailed analysis of the lineshape of the cyclotron resonance absorption within a Drude model shows saturation at intensities of 0.1 W cm-2. The electronic lifetimes deduced using a three-level model depend inversely on the electron concentration in the excited Landau level, indicating electron-electron scattering to be the dominant relaxation mechanism.

Original languageEnglish (US)
Article number080
Pages (from-to)700-703
Number of pages4
JournalSemiconductor Science and Technology
Volume9
Issue number5 S
DOIs
StatePublished - Dec 1 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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