Electronic current transport through molecular monolayers: Comparison between Hg/alkoxy and alkyl monolayer/Si(100) junctions

Florent Thieblemont, Oliver Seitz, Ayelet Vilan, Hagai Cohen, Eric Salomon, Antoine Kahn, David Cahen

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

The preparation of alkoxy monolayers on oxide-free Si (100) and on electronic current transport measurements through junctions that are made up of these monolayers, sandwiched between Si as one electrode and a Hg drop as the other electrode, was reported. Based on the polarized IR spectra, the average tilt angles of the alkoxy and alkyl chains with respect to the surface normal are found to be very similar at 28° and 27° respectively. The monolayer thickness value for the OC12 layer, calculated using an inelastic mean free path of 3.3 nm, is 15∓2Å. The atomic force microscopy (AFM) and contact angle measurements indicate that neither binding chemistry nor molecular length alter the monlayer density. The X-ray photoelectron spectroscopy (XPS) binding energy of the C atom closets to the Si is lower than that of the C atom of the alkyl backbone.

Original languageEnglish (US)
Pages (from-to)3931-3936
Number of pages6
JournalAdvanced Materials
Volume20
Issue number20
DOIs
StatePublished - Oct 17 2008

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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