Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic field

I. L. Drichko; I. Yu Smirnov; A. V. Suslov; M. O. Nestoklon; D. Kamburov; K. W. Baldwin; L. N. Pfeiffer; K. W. West; L. E. Golub

doi:10.1088/1361-648X/ab4a51

Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic field

I. L. Drichko, I. Yu Smirnov, A. V. Suslov, M. O. Nestoklon, D. Kamburov, K. W. Baldwin, L. N. Pfeiffer, K. W. West, L. E. Golub

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Oscillations of the real component of AC conductivity σ₁ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at T=(20-500) mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.

Original language	English (US)
Article number	035303
Journal	Journal of Physics Condensed Matter
Volume	32
Issue number	3
DOIs	https://doi.org/10.1088/1361-648X/ab4a51
State	Published - 2020

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

Keywords

quantum Hall effect
semiconductors
two-dimensional electron gas

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10.1088/1361-648X/ab4a51

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@article{ae08eebe469841fcb80ac73bf335b79e,

title = "Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic field",

abstract = "Oscillations of the real component of AC conductivity σ1 in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at T=(20-500) mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.",

keywords = "quantum Hall effect, semiconductors, two-dimensional electron gas",

author = "Drichko, {I. L.} and {Yu Smirnov}, I. and Suslov, {A. V.} and Nestoklon, {M. O.} and D. Kamburov and Baldwin, {K. W.} and Pfeiffer, {L. N.} and West, {K. W.} and Golub, {L. E.}",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

year = "2020",

doi = "10.1088/1361-648X/ab4a51",

language = "English (US)",

volume = "32",

journal = "Journal of Physics Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing Ltd.",

number = "3",

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TY - JOUR

T1 - Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic field

AU - Drichko, I. L.

AU - Yu Smirnov, I.

AU - Suslov, A. V.

AU - Nestoklon, M. O.

AU - Kamburov, D.

AU - Baldwin, K. W.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Golub, L. E.

PY - 2020

Y1 - 2020

N2 - Oscillations of the real component of AC conductivity σ1 in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at T=(20-500) mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.

AB - Oscillations of the real component of AC conductivity σ1 in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at T=(20-500) mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.

KW - quantum Hall effect

KW - semiconductors

KW - two-dimensional electron gas

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UR - http://www.scopus.com/inward/citedby.url?scp=85075813151&partnerID=8YFLogxK

U2 - 10.1088/1361-648X/ab4a51

DO - 10.1088/1361-648X/ab4a51

M3 - Article

C2 - 31578004

AN - SCOPUS:85075813151

SN - 0953-8984

VL - 32

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 3

M1 - 035303

ER -

Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic field

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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