Electronic and structural properties of the pentanary alloy GaxIn1-xPySbzAs1-y-z

Kyurhee Shim; Herschel Rabitz

doi:10.1063/1.370575

Electronic and structural properties of the pentanary alloy Ga_xIn_1-xP_ySb_zAs_1-y-z

Kyurhee Shim, Herschel Rabitz

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30 Scopus citations

Abstract

The full electronic band structure of the pentanary alloy Ga_xIn_1-xP_ySb_zAs_1-y-z was studied using the universal tight binding (UTB) method, including the composition dependences of the energy band gap and the density of states (DOS). The lattice matching conditions for various substrates are obtained by optimizing the alloy bond length with respect to composition in comparison to the natural bond length of the substrate. The composition dependences of the principal energy band gaps [E(Γ), E(L), and E(X)] are calculated for the alloy lattice matched to different substrates.

Original language	English (US)
Pages (from-to)	7705-7715
Number of pages	11
Journal	Journal of Applied Physics
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.370575
State	Published - Jun 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.370575

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abstract = "The full electronic band structure of the pentanary alloy GaxIn1-xPySbzAs1-y-z was studied using the universal tight binding (UTB) method, including the composition dependences of the energy band gap and the density of states (DOS). The lattice matching conditions for various substrates are obtained by optimizing the alloy bond length with respect to composition in comparison to the natural bond length of the substrate. The composition dependences of the principal energy band gaps [E(Γ), E(L), and E(X)] are calculated for the alloy lattice matched to different substrates.",

author = "Kyurhee Shim and Herschel Rabitz",

year = "1999",

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Electronic and structural properties of the pentanary alloy Ga_xIn_1-xP_ySb_zAs_1-y-z

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