Electronic and structural properties of the pentanary alloy GaxIn1-xPySbzAs1-y-z

Kyurhee Shim, Herschel Rabitz

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

The full electronic band structure of the pentanary alloy GaxIn1-xPySbzAs1-y-z was studied using the universal tight binding (UTB) method, including the composition dependences of the energy band gap and the density of states (DOS). The lattice matching conditions for various substrates are obtained by optimizing the alloy bond length with respect to composition in comparison to the natural bond length of the substrate. The composition dependences of the principal energy band gaps [E(Γ), E(L), and E(X)] are calculated for the alloy lattice matched to different substrates.

Original languageEnglish (US)
Pages (from-to)7705-7715
Number of pages11
JournalJournal of Applied Physics
Volume85
Issue number11
DOIs
StatePublished - Jun 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electronic and structural properties of the pentanary alloy Ga<sub>x</sub>In<sub>1-x</sub>P<sub>y</sub>Sb<sub>z</sub>As<sub>1-y-z</sub>'. Together they form a unique fingerprint.

  • Cite this