Electron transport in amorphous semiconductors

Morrel H. Cohen; E. N. Economou; Costas M. Soukoulis

doi:10.1016/0022-3093(84)90333-8

Electron transport in amorphous semiconductors

Morrel H. Cohen, E. N. Economou, Costas M. Soukoulis

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19 Scopus citations

Abstract

The Mott-CFO model for transport in amorphous semiconductors has a exact basis in the absence of electron-electron and electron-phonon interactions. Nevertheless, there are major discrepancies between the predictions of this "exact" theory and experimental observations. These difficulties can be completely eliminated by utilizing recent advances in our understanding of the density of states and of the energy- and temperature-dependent tail introduced into the mobility gap by the electron-phonon interaction.

Original language	English (US)
Pages (from-to)	285-290
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	66
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-3093(84)90333-8
State	Published - Jul 1984
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(84)90333-8

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AU - Economou, E. N.

AU - Soukoulis, Costas M.

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AB - The Mott-CFO model for transport in amorphous semiconductors has a exact basis in the absence of electron-electron and electron-phonon interactions. Nevertheless, there are major discrepancies between the predictions of this "exact" theory and experimental observations. These difficulties can be completely eliminated by utilizing recent advances in our understanding of the density of states and of the energy- and temperature-dependent tail introduced into the mobility gap by the electron-phonon interaction.

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Electron transport in amorphous semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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