Electron transport in amorphous semiconductors

Morrel H. Cohen, E. N. Economou, Costas M. Soukoulis

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The Mott-CFO model for transport in amorphous semiconductors has a exact basis in the absence of electron-electron and electron-phonon interactions. Nevertheless, there are major discrepancies between the predictions of this "exact" theory and experimental observations. These difficulties can be completely eliminated by utilizing recent advances in our understanding of the density of states and of the energy- and temperature-dependent tail introduced into the mobility gap by the electron-phonon interaction.

Original languageEnglish (US)
Pages (from-to)285-290
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume66
Issue number1-2
DOIs
StatePublished - Jul 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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