TY - JOUR
T1 - Electron spin relaxation times of phosphorus donors in silicon
AU - Tyryshkin, M.
AU - Lyon, A.
AU - Astashkin, V.
AU - Raitsimring, M.
PY - 2003/11/20
Y1 - 2003/11/20
N2 - Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified 28Si:P are presented that show exceptionally long transverse relaxation (decoherence) times, T2, at low temperature. Below ∼10 K the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. T2 for small pulse turning angles is 14 ms at 7 K and extrapolates to ∼60 ms for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.
AB - Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified 28Si:P are presented that show exceptionally long transverse relaxation (decoherence) times, T2, at low temperature. Below ∼10 K the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. T2 for small pulse turning angles is 14 ms at 7 K and extrapolates to ∼60 ms for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.
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U2 - 10.1103/PhysRevB.68.193207
DO - 10.1103/PhysRevB.68.193207
M3 - Article
AN - SCOPUS:0347593980
SN - 1098-0121
VL - 68
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 19
ER -