Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified 28Si:P are presented that show exceptionally long transverse relaxation (decoherence) times, T2, at low temperature. Below ∼10 K the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. T2 for small pulse turning angles is 14 ms at 7 K and extrapolates to ∼60 ms for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 20 2003|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics