Electron spin relaxation times of phosphorus donors in silicon

M. Tyryshkin, A. Lyon, V. Astashkin, M. Raitsimring

Research output: Contribution to journalArticlepeer-review

334 Scopus citations

Abstract

Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified 28Si:P are presented that show exceptionally long transverse relaxation (decoherence) times, T2, at low temperature. Below ∼10 K the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. T2 for small pulse turning angles is 14 ms at 7 K and extrapolates to ∼60 ms for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number19
DOIs
StatePublished - Nov 20 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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