Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka; A. R. Stegner; A. M. Tyryshkin; S. Shankar; M. L.W. Thewalt; S. A. Lyon; K. M. Itoh; M. S. Brandt

doi:10.1103/PhysRevB.81.161203

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka
, A. R. Stegner
, A. M. Tyryshkin
, S. Shankar
, M. L.W. Thewalt
, S. A. Lyon
, K. M. Itoh
, M. S. Brandt

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

Original language	English (US)
Article number	161203
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.81.161203
State	Published - Apr 19 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.81.161203

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title = "Electron paramagnetic resonance of boron acceptors in isotopically purified silicon",

abstract = "The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.",

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doi = "10.1103/PhysRevB.81.161203",

language = "English (US)",

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T1 - Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

AU - Tezuka, H.

AU - Stegner, A. R.

AU - Tyryshkin, A. M.

AU - Shankar, S.

AU - Thewalt, M. L.W.

AU - Lyon, S. A.

AU - Itoh, K. M.

AU - Brandt, M. S.

PY - 2010/4/19

Y1 - 2010/4/19

N2 - The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

AB - The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

UR - https://www.scopus.com/pages/publications/77955370685

UR - https://www.scopus.com/pages/publications/77955370685#tab=citedBy

U2 - 10.1103/PhysRevB.81.161203

DO - 10.1103/PhysRevB.81.161203

M3 - Article

AN - SCOPUS:77955370685

SN - 1098-0121

VL - 81

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

M1 - 161203

ER -

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

Abstract

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