Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L.W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

Original languageEnglish (US)
Article number161203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number16
DOIs
StatePublished - Apr 19 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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