Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka; A. R. Stegner; A. M. Tyryshkin; S. Shankar; M. L.W. Thewalt; S. A. Lyon; K. M. Itoh; M. S. Brandt

doi:10.1103/PhysRevB.81.161203

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L.W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

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25 Scopus citations

Abstract

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

Original language	English (US)
Article number	161203
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.81.161203
State	Published - Apr 19 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.81.161203

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title = "Electron paramagnetic resonance of boron acceptors in isotopically purified silicon",

abstract = "The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.",

author = "H. Tezuka and Stegner, {A. R.} and Tyryshkin, {A. M.} and S. Shankar and Thewalt, {M. L.W.} and Lyon, {S. A.} and Itoh, {K. M.} and Brandt, {M. S.}",

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doi = "10.1103/PhysRevB.81.161203",

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T1 - Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

AU - Tezuka, H.

AU - Stegner, A. R.

AU - Tyryshkin, A. M.

AU - Shankar, S.

AU - Thewalt, M. L.W.

AU - Lyon, S. A.

AU - Itoh, K. M.

AU - Brandt, M. S.

PY - 2010/4/19

Y1 - 2010/4/19

N2 - The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

AB - The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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ER -

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

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