Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs

Loren Pfeiffer; K. W. West; H. L. Stormer; K. W. Baldwin

doi:10.1063/1.102162

Electron mobilities exceeding 10⁷ cm²/V s in modulation-doped GaAs

Loren Pfeiffer, K. W. West, H. L. Stormer, K. W. Baldwin

Research output: Contribution to journal › Article › peer-review

355 Scopus citations

Abstract

A modulation-doped Al_0.35Ga_0.65As/GaAs single interface structure with a 700 Å undoped setback grown by solid-source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×10⁶ cm²/V s at a carrier density of 2.4×10¹¹ electrons/cm² measured in van der Pauw geometry after exposure to light at 0.35 K. This is the highest carrier mobility ever measured in a semiconductor. Similar Al_0.32Ga_0.68As/GaAs structures with 1000-2000 Å setbacks show Hall mobilities in the dark at 0.35 K as high as 4.9×10⁶ cm² /V s for carrier densities of 5.4×10¹⁰ electrons/cm² and lower.

Original language	English (US)
Pages (from-to)	1888-1890
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	18
DOIs	https://doi.org/10.1063/1.102162
State	Published - 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.102162

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title = "Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs",

abstract = "A modulation-doped Al0.35Ga0.65As/GaAs single interface structure with a 700 {\AA} undoped setback grown by solid-source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V s at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K. This is the highest carrier mobility ever measured in a semiconductor. Similar Al0.32Ga0.68As/GaAs structures with 1000-2000 {\AA} setbacks show Hall mobilities in the dark at 0.35 K as high as 4.9×106 cm2 /V s for carrier densities of 5.4×1010 electrons/cm2 and lower.",

author = "Loren Pfeiffer and West, \{K. W.\} and Stormer, \{H. L.\} and Baldwin, \{K. W.\}",

year = "1989",

doi = "10.1063/1.102162",

language = "English (US)",

volume = "55",

pages = "1888--1890",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs

AU - Pfeiffer, Loren

AU - West, K. W.

AU - Stormer, H. L.

AU - Baldwin, K. W.

PY - 1989

Y1 - 1989

N2 - A modulation-doped Al0.35Ga0.65As/GaAs single interface structure with a 700 Å undoped setback grown by solid-source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V s at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K. This is the highest carrier mobility ever measured in a semiconductor. Similar Al0.32Ga0.68As/GaAs structures with 1000-2000 Å setbacks show Hall mobilities in the dark at 0.35 K as high as 4.9×106 cm2 /V s for carrier densities of 5.4×1010 electrons/cm2 and lower.

AB - A modulation-doped Al0.35Ga0.65As/GaAs single interface structure with a 700 Å undoped setback grown by solid-source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V s at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K. This is the highest carrier mobility ever measured in a semiconductor. Similar Al0.32Ga0.68As/GaAs structures with 1000-2000 Å setbacks show Hall mobilities in the dark at 0.35 K as high as 4.9×106 cm2 /V s for carrier densities of 5.4×1010 electrons/cm2 and lower.

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DO - 10.1063/1.102162

M3 - Article

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SP - 1888

EP - 1890

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Electron mobilities exceeding 10⁷ cm²/V s in modulation-doped GaAs

Abstract

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