Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs

Loren Pfeiffer, K. W. West, H. L. Stormer, K. W. Baldwin

Research output: Contribution to journalArticlepeer-review

335 Scopus citations

Abstract

A modulation-doped Al0.35Ga0.65As/GaAs single interface structure with a 700 Å undoped setback grown by solid-source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V s at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K. This is the highest carrier mobility ever measured in a semiconductor. Similar Al0.32Ga0.68As/GaAs structures with 1000-2000 Å setbacks show Hall mobilities in the dark at 0.35 K as high as 4.9×106 cm2 /V s for carrier densities of 5.4×1010 electrons/cm2 and lower.

Original languageEnglish (US)
Pages (from-to)1888-1890
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number18
DOIs
StatePublished - 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs'. Together they form a unique fingerprint.

Cite this