Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain

Yifei Huang, Bahman Hekmatshoar, Sigurd Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages241-242
Number of pages2
DOIs
StatePublished - Dec 1 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: Jun 23 2008Jun 25 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period6/23/086/25/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Huang, Y., Hekmatshoar, B., Wagner, S., & Sturm, J. C. (2008). Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 241-242). [4800821] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800821