Electron-hole separation in a two-dimensional electron system induced by electric fields

F. Plentz, D. Heiman, A. Pinczuk, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Electric-field-induced separation of electrons and holes in a two-dimensional electron system is demonstrated in a single-side-doped GaAs/GaA1As quantum well structure. The separation is manifest in the quantum-confined Stark shift and also in a reduced electron-hole overlap that produces a large increase in the radiative recombination time. These effects were produced either by applying a gate voltage or by changing the internal Hartree electric field via changing the electron density. The observed order-of-magnitude lifetime increase agrees quantitatively with results of self-consistent calculations of the wavefunction overlaps.

Original languageEnglish (US)
Pages (from-to)103-107
Number of pages5
JournalSolid State Communications
Volume101
Issue number2
DOIs
StatePublished - Jan 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

Keywords

  • A. semiconductors
  • D. electronic states
  • D. optical properties
  • D. recombination and trapping

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