Abstract
Electric-field-induced separation of electrons and holes in a two-dimensional electron system is demonstrated in a single-side-doped GaAs/GaA1As quantum well structure. The separation is manifest in the quantum-confined Stark shift and also in a reduced electron-hole overlap that produces a large increase in the radiative recombination time. These effects were produced either by applying a gate voltage or by changing the internal Hartree electric field via changing the electron density. The observed order-of-magnitude lifetime increase agrees quantitatively with results of self-consistent calculations of the wavefunction overlaps.
Original language | English (US) |
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Pages (from-to) | 103-107 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 101 |
Issue number | 2 |
DOIs | |
State | Published - Jan 1997 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
Keywords
- A. semiconductors
- D. electronic states
- D. optical properties
- D. recombination and trapping