Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures

Jun He; Haizheng Zhong; Gregory D. Scholes

doi:10.1103/PhysRevLett.105.046601

Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures

Jun He, Haizheng Zhong, Gregory D. Scholes

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60 Scopus citations

Abstract

Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.

Original language	English (US)
Article number	046601
Journal	Physical review letters
Volume	105
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevLett.105.046601
State	Published - Jul 21 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.105.046601

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title = "Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures",

abstract = "Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.",

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doi = "10.1103/PhysRevLett.105.046601",

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AU - Zhong, Haizheng

AU - Scholes, Gregory D.

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Y1 - 2010/7/21

N2 - Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.

AB - Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.

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Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures

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