Drift mobilities, drift mobility-lifetime products and minority carrier diffusion lengths perpendicular to the planes of a-Si:H,F/a-Si//0//. //3//5,Ge//0//. //6//5:H,F superlattices have been measured over a range of well sublayer widths. The transport data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods to recombination dominated transport at the bottom of the wells for large periods. The characteristic period for this transition is approximately 3 nm.