ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES.

J. Kolodzey, S. Aljishi, R. Schwarz, D. S. Shen, S. Quinlan, S. A. Lyon, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Drift mobilities, drift mobility-lifetime products and minority carrier diffusion lengths perpendicular to the planes of a-Si:H,F/a-Si//0//. //3//5,Ge//0//. //6//5:H,F superlattices have been measured over a range of well sublayer widths. The transport data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods to recombination dominated transport at the bottom of the wells for large periods. The characteristic period for this transition is approximately 3 nm.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages429-434
Number of pages6
ISBN (Print)0931837367
StatePublished - Dec 1 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume70
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Kolodzey, J., Aljishi, S., Schwarz, R., Shen, D. S., Quinlan, S., Lyon, S. A., & Wagner, S. (1986). ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES. In Materials Research Society Symposia Proceedings (pp. 429-434). (Materials Research Society Symposia Proceedings; Vol. 70). Materials Research Soc.