Electron affinity at aluminum nitride surfaces

C. I. Wu, Antoine Kahn, E. S. Hellman, D. N.E. Buchanan

Research output: Contribution to journalArticle

93 Scopus citations

Abstract

We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level, valence-band maximum, conduction-band minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces.

Original languageEnglish (US)
Pages (from-to)1346-1348
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number10
DOIs
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electron affinity at aluminum nitride surfaces'. Together they form a unique fingerprint.

  • Cite this

    Wu, C. I., Kahn, A., Hellman, E. S., & Buchanan, D. N. E. (1998). Electron affinity at aluminum nitride surfaces. Applied Physics Letters, 73(10), 1346-1348. https://doi.org/10.1063/1.122158