Abstract
We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level, valence-band maximum, conduction-band minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces.
Original language | English (US) |
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Pages (from-to) | 1346-1348 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 73 |
Issue number | 10 |
DOIs | |
State | Published - 1998 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)