TY - GEN
T1 - Electromagnetic-Circuit Co-design approach towards Reconfigurable Terahertz Holographic CMOS Metasurface
AU - Venkatesh, S.
AU - Lu, X.
AU - Saeidi, H.
AU - Sengupta, K.
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/20
Y1 - 2021/9/20
N2 - In this article, we design and demonstrate a multi-functional, digitally programmable metasurface at 0.3 THz exploiting electromagnetic-circuit co-design approach. The metasurface is fabricated using industry standard 65-nm CMOS process. Each metasurface tile consists of 12 times 12 periodic array of unit cells. We also demonstrate the scalability of this approach by chip tiling and create a larger aperture of 2 times 2 array. Each unit cell in the metasurface is an individually addressable and programmable multi-split-ring resonator consisting of eight metaloxide-semiconductor field-effect transistors (MOSFET) at the capacitive gaps. Each unit cell can be programmed to control both amplitude and phase independently. We experimentally demonstrate multi-functional applications namely, high-speed beam modulation with switching ON/OFF ratio of sim 25 dB at a maximum clock speed of 5 GHz, beamforming capability of ± 30° and spatial wavefront manipulation using binary-amplitude-only holography technique at 0.3 THz. The metasurface chip operates at near-zero DC power (240 mu text{W}) consumption.
AB - In this article, we design and demonstrate a multi-functional, digitally programmable metasurface at 0.3 THz exploiting electromagnetic-circuit co-design approach. The metasurface is fabricated using industry standard 65-nm CMOS process. Each metasurface tile consists of 12 times 12 periodic array of unit cells. We also demonstrate the scalability of this approach by chip tiling and create a larger aperture of 2 times 2 array. Each unit cell in the metasurface is an individually addressable and programmable multi-split-ring resonator consisting of eight metaloxide-semiconductor field-effect transistors (MOSFET) at the capacitive gaps. Each unit cell can be programmed to control both amplitude and phase independently. We experimentally demonstrate multi-functional applications namely, high-speed beam modulation with switching ON/OFF ratio of sim 25 dB at a maximum clock speed of 5 GHz, beamforming capability of ± 30° and spatial wavefront manipulation using binary-amplitude-only holography technique at 0.3 THz. The metasurface chip operates at near-zero DC power (240 mu text{W}) consumption.
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U2 - 10.1109/Metamaterials52332.2021.9577177
DO - 10.1109/Metamaterials52332.2021.9577177
M3 - Conference contribution
AN - SCOPUS:85118952660
T3 - 2021 15th International Congress on Artificial Materials for Novel Wave Phenomena, Metamaterials 2021
SP - 448
EP - 450
BT - 2021 15th International Congress on Artificial Materials for Novel Wave Phenomena, Metamaterials 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th International Congress on Artificial Materials for Novel Wave Phenomena, Metamaterials 2021
Y2 - 20 September 2021 through 25 September 2021
ER -