We have observed hot-electron electroluminescence in AlGaAs/GaAs heterodiodes. The resolution provided by the luminescence technique allows ballistically launched electrons to be clearly distinguished from those that have emitted one or more longitudinal-optical phonons. The electroluminescence consists of a series of peaks spaced by one-LO-phonon energy whose width is in agreement with a calculation of the energy distribution of the injected electrons. The position of the ballistic peak provides a new way to accurately measure the conduction-band offset in semiconductor heterostructures.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - Jan 1 1989|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)