Electroluminescence of ballistically injected electrons in AlGaAs/GaAs heterodiodes

C. L. Petersen, M. R. Frei, S. A. Lyon

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We have observed hot-electron electroluminescence in AlGaAs/GaAs heterodiodes. The resolution provided by the luminescence technique allows ballistically launched electrons to be clearly distinguished from those that have emitted one or more longitudinal-optical phonons. The electroluminescence consists of a series of peaks spaced by one-LO-phonon energy whose width is in agreement with a calculation of the energy distribution of the injected electrons. The position of the ballistic peak provides a new way to accurately measure the conduction-band offset in semiconductor heterostructures.

Original languageEnglish (US)
Pages (from-to)2849-2852
Number of pages4
JournalPhysical review letters
Volume63
Issue number26
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electroluminescence of ballistically injected electrons in AlGaAs/GaAs heterodiodes'. Together they form a unique fingerprint.

Cite this