Metal halide perovskite semiconductors have shown great potential as emissive layers in light-emitting diodes and gain media in optically pumped lasers, and thus represent a possible foundation for a non-epitaxial electrically driven laser diode. However, degradation of perovskite-based devices and inability to maintain high-efficiency operation at large current densities have so far inhibited realization of this goal. This report will explore the causes underlying these observations - specifically, Joule heating, electric field-induced quenching, charge injection imbalance, and Auger recombination - and consider approaches to achieve an electrically driven perovskite laser diode.
All Science Journal Classification (ASJC) codes
- Materials Science(all)