TY - JOUR
T1 - Electrical conductivity through π–π stacking in a two-dimensional porous gallium catecholate metal–organic framework
AU - Skorupskii, Grigorii
AU - Chanteux, Géraldine
AU - Le, Khoa N.
AU - Stassen, Ivo
AU - Hendon, Christopher H.
AU - Dincă, Mircea
N1 - Publisher Copyright:
© 2022 The Authors. Annals of the New York Academy of Sciences published by Wiley Periodicals LLC on behalf of New York Academy of Sciences.
PY - 2022/12
Y1 - 2022/12
N2 - Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first-row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11-hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed-shell electronic configuration and is present in its trivalent state—in contrast to most conductive MOFs, which are formed by open-shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m2/g, comparable to transition metal analogs.
AB - Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first-row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11-hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed-shell electronic configuration and is present in its trivalent state—in contrast to most conductive MOFs, which are formed by open-shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m2/g, comparable to transition metal analogs.
KW - electrical transport
KW - metal-organic frameworks
KW - porous conductors
KW - semiconductor materials
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U2 - 10.1111/nyas.14906
DO - 10.1111/nyas.14906
M3 - Article
C2 - 36183322
AN - SCOPUS:85139046026
SN - 0077-8923
VL - 1518
SP - 226
EP - 230
JO - Annals of the New York Academy of Sciences
JF - Annals of the New York Academy of Sciences
IS - 1
ER -