Electrical conductivity and Wigner crystallization

M. A. Paalanen; R. L. Willett; R. R. Ruel; P. B. Littlewood; K. W. West; L. N. Pfeiffer

doi:10.1103/PhysRevB.45.13784

Electrical conductivity and Wigner crystallization

M. A. Paalanen, R. L. Willett, R. R. Ruel, P. B. Littlewood, K. W. West, L. N. Pfeiffer

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55 Scopus citations

Abstract

We have measured the temperature dependence of both the dc resistance and the rf conductivity for several high quality two-dimensional GaAs/AlxGa1-xAs electron samples in the high-magnetic-field Wigner-crystallization regime. We have found an increase in the activation energy of the dc resistance at the temperature where the dynamical conductivity becomes frequency dependent. We interpret this temperature as the melting temperature of the Wigner crystal and discuss the conduction mechanisms on both sides of the transition.

Original language	English (US)
Pages (from-to)	13784-13787
Number of pages	4
Journal	Physical Review B
Volume	45
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.45.13784
State	Published - 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.45.13784

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abstract = "We have measured the temperature dependence of both the dc resistance and the rf conductivity for several high quality two-dimensional GaAs/AlxGa1-xAs electron samples in the high-magnetic-field Wigner-crystallization regime. We have found an increase in the activation energy of the dc resistance at the temperature where the dynamical conductivity becomes frequency dependent. We interpret this temperature as the melting temperature of the Wigner crystal and discuss the conduction mechanisms on both sides of the transition.",

author = "Paalanen, {M. A.} and Willett, {R. L.} and Ruel, {R. R.} and Littlewood, {P. B.} and West, {K. W.} and Pfeiffer, {L. N.}",

year = "1992",

doi = "10.1103/PhysRevB.45.13784",

language = "English (US)",

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journal = "Physical Review B",

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T1 - Electrical conductivity and Wigner crystallization

AU - Paalanen, M. A.

AU - Willett, R. L.

AU - Ruel, R. R.

AU - Littlewood, P. B.

AU - West, K. W.

AU - Pfeiffer, L. N.

PY - 1992

Y1 - 1992

N2 - We have measured the temperature dependence of both the dc resistance and the rf conductivity for several high quality two-dimensional GaAs/AlxGa1-xAs electron samples in the high-magnetic-field Wigner-crystallization regime. We have found an increase in the activation energy of the dc resistance at the temperature where the dynamical conductivity becomes frequency dependent. We interpret this temperature as the melting temperature of the Wigner crystal and discuss the conduction mechanisms on both sides of the transition.

AB - We have measured the temperature dependence of both the dc resistance and the rf conductivity for several high quality two-dimensional GaAs/AlxGa1-xAs electron samples in the high-magnetic-field Wigner-crystallization regime. We have found an increase in the activation energy of the dc resistance at the temperature where the dynamical conductivity becomes frequency dependent. We interpret this temperature as the melting temperature of the Wigner crystal and discuss the conduction mechanisms on both sides of the transition.

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U2 - 10.1103/PhysRevB.45.13784

DO - 10.1103/PhysRevB.45.13784

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JO - Physical Review B

JF - Physical Review B

IS - 23

ER -

Electrical conductivity and Wigner crystallization

Abstract

All Science Journal Classification (ASJC) codes

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